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參數(shù)資料
| 型號： | 2SJ117 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 20K |
| 代理商： | 2SJ117 |
2SJ117
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch*
1
–400
V
Gate to source voltage
±20
V
Drain current
–2
A
Drain peak current
–4
A
Body to drain diode reverse drain current
–2
A
Channel dissipation
40
W
Channel temperature
Tch
150
°C
Storage temperature
Notes: 1. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–400
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source leak current
I
GSS
—
—
±1
μA
V
GS
= ±20 V, V
DS
= 0
V
DS
= –320 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –1 A, V
GS
= –15 V*
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–1
mA
V
GS(off)
R
DS(on)
–2.0
—
–5.0
V
Static drain to source on state
resistance
—
5
7
Forward transfer admittance
|y
fs
|
Ciss
0.4
0.7
—
S
I
D
= –1 A, V
DS
= –20 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Input capacitance
—
520
—
pF
Output capacitance
Coss
—
110
—
pF
Reverse transfer capacitance
Crss
—
15
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= –2 A, V
GS
= –15 V,
R
L
= 15
Rise time
—
25
—
ns
Turn-off delay time
—
45
—
ns
Fall time
—
35
—
ns
Body to drain diode forward
voltage
—
–0.8
—
V
I
F
= –1 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
300
—
ns
I
F
= –1 A, V
= 0,
di
F
/dt = 100 A/μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ118 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ119 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ120L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ120S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ122 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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