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參數(shù)資料
| 型號(hào)： | 2SJ130S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 54K |
| 代理商： | 2SJ130S |
2SJ130(L), 2SJ130(S)
3
30
20
10
0
50
100
150
Case Temperature T
C
(
°
C)
Power vs. Temperature Derating
C
–5
–1.0
–0.2
–0.05
–20
–100
–500
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
–2
–0.1
–5
–10
–50
–200
Ta = 25
°
C
10
μ
s
100
s
1ms
Operation in this area
is limited by R
DS (on)
–0.5
DCOpeaion(T
C
=25
°
C
–2.0
–20
–50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–1.6
–0.4
–10
–30
–40
Pulse Test
0
–0.8
–1.2
–5 V
V
GS
= –4 V
–7 V
–15 V
D
D
–6 V
–10 V
–2.0
–4
–10
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
–1.6
–0.4
–2
–6
–8
–25
°
C
0
–0.8
–1.2
V
DS
= –20 V
Pulse Test
75
°
C
T
C
= 25
°
C
–20
–8
–20
Gate to Source Voltage V
GS
(V)
D
D
–16
–4
–4
–12
–16
0
–8
–12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–1 A
I
D
= –2 A
Pulse Test
–0.5 A
50
–0.2
Drain Current I
D
(A)
–5
S
R
D
)
20
1.0
–0.1
–0.5
–2
–0.05
5
10
Static Drain to Source on State
Resistance vs. Drain Current
2
0.5
–1.0
–15 V
V
GS
= –10 V
Pulse Test
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|---|---|
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