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參數(shù)資料
| 型號(hào)： | 2SJ130STL-E |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 300 V, 8.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 86K |
| 代理商： | 2SJ130STL-E |
2SJ130(L), 2SJ130(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
20
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
4
8
12
16
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
VGS = –10 V
Pulse Test
ID = –2 A
–0.5 A
–1 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
5
2
0.5
1
0.2
0.05
0.1
–0.02
–0.05 –0.1 –0.2
–0.5
–1
–2
Ta = 25°C
75°C
VDS = –20 V
Pulse Test
Tc = 25°C
VDS = –20 V
ID = –0.5 A
–25°C
Frequency f (Hz)
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Frequency
0.2 M
0.5 M 1 M
2 M
5 M 10 M 20 M
5
2
1
0.2
0.5
0.1
0.05
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
300
100
30
10
3
1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–500
–400
–300
–200
–100
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
VDD = –200 V
–100 V
–50 V
ID = –1 A
100
50
20
5
10
2
10
–0.1 –0.2
–0.5
–1
–2
–5
0.05
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –50 V
–100 V
–200 V
VGS = –10 V, VDD = –30 V
PW = 2
s, duty ≤ 1 %
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