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參數資料
| 型號： | 2SJ133 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 60 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-3, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 335K |
| 代理商： | 2SJ133 |
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MOS FIELD EFFECT POWER TRANSISTOR
2SJ133,133-Z
P-CHANNEL POWER MOSFET
FOR SWITCHING
DATA SHEET
Document No. D16193EJ4V0DS00 (4th edition)
Date Published January 2007 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
Gate drive available at logic level (VGS =
4 V)
High current control available in small dimension due to low RDS(on) (
0.45 Ω)
2SJ133-Z is a lead process product and is ideal for mounting a hybrid IC.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
VDSS
VGS = 0 V
60
V
Gate to Source Voltage
VGSS
VDS = 0 V
m20
V
Drain Current (DC)
ID(DC)
TC = 25
°C
m2.0
A
Drain Current (pulse)
ID(pulse)
PW
≤ 300
μs
duty cycle
≤ 10%
m8.0
A
Total Power Dissipation
PT1
TC = 25
°C
20
W
Total Power Dissipation
PT2
TA = 25
°C
1.0
Note 1, 2.0 Note 2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note 1. Printing board mounted
2. 7.5 cm
2 × 0.7 mm ceramic board mounted
PACKAGE DRAWING (UNIT: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
EQUIVALENT CIRCUIT
Source
Internal
diode
Gate
Drain
Electrode connection
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Fin (drain)
TO-252 (MP-3Z)
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
TO-251 (MP-3)
<R>
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ133-Z | 2 A, 60 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AB |
| 2SJ144-BL | P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SJ148 | 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2SJ162-E | 7 A, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ161-E | 7 A, P-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ133-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -2A 800m@10V TO251 Cut Tape |
| 2SJ133-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ133-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 3-Pin(2+Tab) TO-252 T/R Bulk |
| 2SJ134 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ135 | 制造商:NEC 制造商全稱:NEC 功能描述:FAST SWITCHING P-CHANNEL SILICON POWER MOS FET |
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