參數(shù)資料
型號(hào): 2SJ162-E
元件分類(lèi): JFETs
英文描述: 7 A, P-CHANNEL, Si, POWER, MOSFET
封裝: SC-65, TO-3P, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 71K
代理商: 2SJ162-E
2SJ160, 2SJ161, 2SJ162
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
2SJ160
–120
2SJ161
–140
Drain to source voltage
2SJ162
VDSX
–160
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–7
A
Body to drain diode reverse drain current
IDR
–7
A
Channel dissipation
Pch
Note 1
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
2SJ160
–120
V
2SJ161
–140
V
Drain to source breakdown
voltage
2SJ162
V (BR) DSX
–160
V
ID = –10 mA, VGS = 10 V
Gate to source breakdown voltage
V (BR) GSS
±15
V
IG =
±100 A, VDS = 0
Gate to source cutoff voltage
VGS (off)
–0.15
–1.45
V
ID = –100 mA, VDS = –10 V
Drain to source saturation voltage
VDS (sat)
–12
V
ID = –7 A, VGS = 0
Note 2
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = –3 A, VDS = –10 V
Note 2
Input capacitance
Ciss
900
pF
Output capacitance
Coss
400
pF
Reverse transfer capacitance
Crss
40
pF
VGS = 5 V, VDS = –10 V,
f = 1 MHz
Turn-on time
ton
230
ns
Turn-off time
toff
110
ns
VDD = –20 V ID = –4 A
Note:
2. Pulse test
相關(guān)PDF資料
PDF描述
2SJ161-E 7 A, P-CHANNEL, Si, POWER, MOSFET
2SJ164O 20 mA, P-CHANNEL, Si, SMALL SIGNAL, JFET
2SJ166-A 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ166 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ166-A 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ163 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:For General Switching
2SJ164 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:For Switching
2SJ165 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SJ166 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
2SJ166-A 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA