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參數(shù)資料
| 型號： | 2SJ181L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SJ181L |
2SJ181(L), 2SJ181(S)
4
–20
–16
–12
–8
–4
0
–4
–8
12
–16
–20
Gate to Source Voltage V (V)
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
–0.1 A
–0.2 A
I = –0.5 A
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
500
200
100
20
50
10
5
–0.02
–0.05 –0.1
–0.2
–0.5
–1
–2
–15 V
V = –10 V
Pulse Test
40
32
24
16
8
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
V = –10 V
–0.1 A
–0.2 A
I = –0.5 A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ181S | Silicon P-Channel MOS FET |
| 2SJ182 | Silicon P-Channel MOS FET |
| 2SJ181 | Silicon P-Channel MOS FET |
| 2SJ182L | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ182S | Silicon P Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ181-L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ181L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ181S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:P-Channel MOS FET For High-Speed Switching |
| 2SJ181STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ181STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
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