參數(shù)資料
型號: 2SJ182(S)
英文描述: TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR
中文描述: 晶體管| MOSFET的| P通道| 60V的五(巴西)直| 3A條(?。﹟對252VAR
文件頁數(shù): 6/11頁
文件大?。?/td> 49K
代理商: 2SJ182(S)
2SJ181(L), 2SJ181(S)
4
–20
–16
–12
–8
–4
0
–4
–8
12
–16
–20
Gate to Source Voltage
V
(V)
GS
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
–0.1 A
–0.2 A
D
I
= –0.5 A
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
500
200
100
20
50
10
5
–0.02
–0.05 –0.1
–0.2
–0.5
–1
–2
–15 V
V
= –10 V
GS
Pulse Test
40
32
24
16
8
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
GS
Pulse Test
V
= –10 V
–0.1 A
–0.2 A
D
I
= –0.5 A
相關(guān)PDF資料
PDF描述
2SJ182L Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ188FA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR
2SJ189FA Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ286 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 150MA I(D) | TO-236
2SJ388(S) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ183 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON P-CHANNEL MOS FET
2SJ184 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
2SJ185 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
2SJ185-A 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA
2SJ185-T1B-A 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 50V 0.1A 3-Pin SC-59 T/R 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA