參數(shù)資料
型號(hào): 2SJ186CYEL-E
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-62, UPAK -3
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 89K
代理商: 2SJ186CYEL-E
2SJ186
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–200
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–0.5
A
Drain peak current
ID (pulse)
Note 1
–1.0
A
Body to drain diode reverse drain current
IDR
–0.5
A
Channel dissipation
Pch
Note 2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–200
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±15
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±12 V, VDS = 0
Zero gate voltage drain current
IDSS
–50
A
VDS = –160 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
–4.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
8.0
12.0
ID = –0.25 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
10.0
15.0
ID = –1 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
0.18
0.3
S
ID = –0.25 A, VDS = –10 V
Note 3
Input capacitance
Ciss
75
pF
Output capacitance
Coss
32
pF
Reverse transfer capacitance
Crss
5
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
6
ns
Rise time
tr
6
ns
Turn-off delay time
td (off)
17
ns
Fall time
tf
15
ns
ID = –0.25 A
VGS = –10 V
RL = 120
Body to drain diode forward voltage
VDF
0.95
V
IF = –0.5 A, VGS = 0
Body to drain diode reverse recovery time
trr
100
ns
IF = –0.5 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
相關(guān)PDF資料
PDF描述
2SJ190 1 A, 60 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ193 1 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ197-AZ 1.5 A, 60 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ197-T1 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ197 1.5 A, 60 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ186CYTL 制造商:Renesas Electronics Corporation 功能描述:
2SJ187 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications
2SJ187TD 制造商:DC 功能描述:*
2SJ188 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications
2SJ188FA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR