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參數(shù)資料
| 型號(hào)： | 2SJ238 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 1A條（?。﹟至243 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 54K |
| 代理商： | 2SJ238 |
2SJ234(L), 2SJ234(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
–30
V
Gate to source voltage
±20
V
Drain current
–2.5
A
Drain peak current
1
–10
A
Body to drain diode reverse drain current
–2.5
A
Channel dissipation
2
10
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol Min
V
(BR)DSS
Typ
—
Max
—
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 0
–30
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
I
GSS
—
—
–1.0
—
—
—
—
0.3
±10
–100
–2.0
0.4
μA
μA
V
V
GS
= ±16 V, V
DS
= 0
V
DS
= –25 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –1.5 A, V
GS
= –10 V*
V
GS(off)
R
DS(on)
1
—
1.0
—
0.5
1.8
245
0.7
—
—
I
D
= –1.5 A, V
GS
= –4 V*
I
D
= –1.5 A, V
DS
= –10 V*
V
= –10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
Input capacitance
|y
fs
|
Ciss
S
pF
1
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
t
d(on)
—
—
—
170
60
7
—
—
—
pF
pF
ns
I
D
= –1.5 A, V
GS
= –10 V,
R
L
= 20
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
r
t
d(off)
t
f
V
DF
—
—
—
—
25
85
72
–1.1
—
—
—
—
ns
ns
ns
V
I
F
= –2.5 A, V
GS
= 0
t
rr
—
80
—
ns
I
F
= –2.5 A, V
= 0,
di
F
/dt = 50 A/μs
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| 2SJ241 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
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