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參數(shù)資料
| 型號(hào)： | 2SJ350 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 47K |
| 代理商： | 2SJ350 |
2SJ350
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
–120
V
Gate to source voltage
±
20
V
Drain current
–6
A
Drain peak current
–12
A
Body to drain diode reverse drain current
–6
A
Channel dissipation
20
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–120
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –100 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –4 A, V
GS
= –10 V*
1
I
D
= –4 A, V
GS
= –4 V*
1
I
D
= –4 A, V
DS
= –10 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
V
GS(off)
R
DS(on)
–1.0
—
–2.0
V
Static drain to source on state
—
0.5
0.7
resistance
—
0.7
0.9
Forward transfer admittance
|y
fs
|
Ciss
3.0
5.0
—
S
Input capacitance
—
900
—
pF
Output capacitance
Coss
—
265
—
pF
Reverse transfer capacitance
Crss
—
65
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
11
—
ns
I
D
= –4 A, V
GS
= –10 V,
R
L
= 7.5
Rise time
—
45
—
ns
Turn-off delay time
—
170
—
ns
Fall time
—
80
—
ns
Body to drain diode forward
voltage
—
–1.2
—
V
I
F
= –6 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
240
—
ns
I
F
= –6 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SJ350-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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