參數(shù)資料
型號: 2SJ358
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
中文描述: P溝道MOS場效應(yīng)晶體管的高速交換器
文件頁數(shù): 3/6頁
文件大?。?/td> 97K
代理商: 2SJ358
2SJ358
3
–10
–1
–8
–6
–4
–2
0
–2
–3
–4
–5
V
DS
– Drain to Source Voltage – V
I
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–10
–1
–1
–0.1
–0.01
–2
–3
V
GS
– Gate to Source Voltage – V
I
D
TRANSFER CHARACTERISTICS
–4
–0.00001
–0.0001
–0.001
Pulsed
–0V
–45V
–4.0 V
–3.5 V
–3.0 V
–2.5 V
V
GS
= –2.0 V
T
a
= –25 C
T
a
= 150 C
T
a
= 0 C
T
a
= 25 C
T
a
= 75 C
10
–0.001
I
D
– Drain Current – A
1
0.1
0.01
–0.01
–0.1
–1
|
f
|
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0.7
–0.01
0.3
–0.01
–0.1
I
D
– Drain Current – A
R
D
–10
0
0.1
V
= –10 V
Pulsed
0.001
–0.0001
T
a
= 75 C
T
a
= 25 C
T
a
= 150 C
T
a
= 0 C
T
a
= –25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRINT
–1
0.5
V
= –10 V
Pulsed
V
= –4 V
Pulsed
0.5
–0.01
0.4
0.3
0.1
–0.1
–1
–10
I
D
– Drain Current – A
R
D
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
= –10 V
Pulsed
0
–0.001
T
a
= 25 C
0.2
T
a
= 0 C
T
a
= –25 C
T
a
= 150 C
T
a
= 75 C
0.6
0.2
0.4
–2
V
GS
– Gate to Source Voltage – V
R
D
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
0.6
0.2
0.4
–4
–6
–8 –10 –12 –14 –16 –18 –20
I
D
= 1.5 A
I
D
= 3.0 A
T
a
= 25 C
T
a
= –25 C
T
a
= 0 C
T
a
= 75 C
T
a
= 150 C
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