- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄351958 > 2SJ388L PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ388L |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | 2SJ388L |
2SJ387(L), 2SJ387(S)
5
–0.5
–0.4
–0.3
–0.2
–0.1
0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
–2
–4
–6
–8
–10
Pulse Test
D
I
= –5 A
–1 A
–2 A
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.2
0.5
0.1
0.01
0.02
0.05
–0.5
–1
–2
–5
–10 –20
–50
–4 V
Pulse Test
V
= –2.5 V
GS
0.2
0.16
0.12
0.08
0.04
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–4 V
D
I
= –5 A
–1, –2 A
GS
V
= –2.5 V
–5 A
–2 A
–1 A
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
50
20
10
2
5
1
0.5
–0.1 –0.2
–0.5
–1
–2
–5
–10
Tc = –25 °C
75 °C
25 °C
V
= –10 V
Pulse Test
DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ388S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ389(L) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA |
| 2SJ389(S) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ389L | |
| 2SJ389S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ388S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ389 | 制造商:HITACHI-METALS 制造商全稱:Hitachi Metals, Ltd 功能描述:Silicon P Channel MOS FET |
| 2SJ389(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA |
| 2SJ389(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA |
| 2SJ389L | 制造商:HITACHI-METALS 制造商全稱:Hitachi Metals, Ltd 功能描述:Silicon P Channel MOS FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。