- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄351958 > 2SJ389(S) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset PDF資料下載
參數(shù)資料
| 型號： | 2SJ389(S) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 10A條（?。﹟對252AA |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SJ389(S) |
2SJ387(L), 2SJ387(S)
7
–20
–16
–12
–8
–4
0
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–5 V
–3 V
V
= 0, 5 V
GS
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
100 m
1
10
s
(t)
γ
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
θ
γ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot
Pulse
Tc = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ389L | |
| 2SJ389S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ55 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ56 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
| 2SK1197 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ390 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ399 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P-Channel MOS FET |
| 2SJ400 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ400-DL-E | 制造商:SANYO 功能描述:Pch 30V 35A 0.035 rlo?ec Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETP CH30V35ASOT404 |
| 2SJ401 | 制造商:Toshiba America Electronic Components 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。