參數(shù)資料
型號: 2SJ494
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關(guān)P溝道功率MOS FET工業(yè)用
文件頁數(shù): 4/8頁
文件大小: 71K
代理商: 2SJ494
4
2SJ494
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
f
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
150
V
GS
- Gate to Source Voltage - V
R
D
0
–5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
I
D
- Drain Current - A
R
D
100
–1
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
μ
μ
100
V
DS
= –10 V
Pulsed
–0.1
–1.0
1
10
100
–10
–100
50
–10
–20
Pulsed
150
–10
–100
Pulsed
0
V
DS
= –10 V
I
D
= –1 mA
–50
0
50
100
150
0
0.1
Single Pulse
–1.0
–2.0
100
V
GS
= –10 V
V
GS
= –4 V
Tch = –25 C
25 C
75 C
125 C
I
D
= –20 A
–1.5
–0.5
50
R
th(ch-a)
= 62.5 C/W
R
th(ch-c)
= 3.57 C/W
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