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參數(shù)資料
| 型號(hào)： | 2SJ549(S) |
| 元件分類： | JFETs |
| 英文描述： | 0.23 ohm, POWER, FET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SJ549(S) |
2SJ549(L),2SJ549(S)
5
–1.0
–0.8
–0.6
–0.4
–0.2
0
–4
–8
–12
–16
–20
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
–10 V
I
= –5 A
D
GS
V
= –4 V
–0.1
–1
–10
0.1
10
20
5
1
0.5
–0.2
–0.5
–2
–5
1
0.5
0.05
0.02
0.01
–0.1
–0.3
–1
–3
–10
–30
–100
–1, –2 A
I
= –5 A
D
–2 A
–1 A
0.2
0.1
–10 V
V
= –4 V
GS
–1 A
–2 A
–5 A
2
75 °C
25 °C
Ta = –25 °C
DS
V
= –10 V
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ549(S) | 0.23 ohm, POWER, FET |
| 2SJ549(L) | 0.23 ohm, POWER, FET |
| 2SJ549(L) | 0.23 ohm, POWER, FET |
| 2SJ549STL-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ550(S) | 0.155 ohm, POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ549STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 8A I(D) | TO-3 |
| 2SJ550 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ550(S)(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) LDPAK(S)-(1) T/R |
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