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參數(shù)資料
| 型號： | 2SJ549STL-E |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SC-83, LDPAK-3 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 97K |
| 代理商： | 2SJ549STL-E |
2SJ549(L), 2SJ549(S)
Rev.4.00 Jun 05, 2006 page 3 of 8
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0
–2
–4–6–8
–10
0
–2
–4
–6
–8
0
–1–2–3–4–5
Tc = 75°C
80
0
20
40
60
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–4 V
–3.5 V
–2.5 V
–3 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–10
–30
–3
–0.3
–1
–0.1
–0.3
–1
–3
–10
–30
–100
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–2 A
–1 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
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| 2SJ550(L) | 0.155 ohm, POWER, FET |
| 2SJ550L | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ550S-E | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ550L | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 8A I(D) | TO-3 |
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| 2SJ550L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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