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參數(shù)資料
| 型號(hào)： | 2SJ551(L) |
| 元件分類： | JFETs |
| 英文描述： | 0.11 ohm, POWER, FET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SJ551(L) |
2SJ551(L),2SJ551(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.050
0.065
I
D = –9A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.070
0.110
I
D = –9A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1016—
S
I
D = –9A, VDS = -10V
Note4
Input capacitance
Ciss
—
1300
—
pF
V
DS = –10V
Output capacitance
Coss
—
650
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
180
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
14
—
ns
V
GS = –10V, ID = –9A
Rise time
t
r
—
95
—
ns
R
L =3.33
Turn-off delay time
t
d(off)
—
190
—
ns
Fall time
t
f
—
135
—
ns
Body–drain diode forward voltage
V
DF
—
–1.0
—
V
I
F = –18A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
70
—
ns
I
F = –18A, VGS = 0
diF/ dt =50A/s
Note:
4. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ551(L) | 0.11 ohm, POWER, FET |
| 2SJ551(S) | 0.11 ohm, POWER, FET |
| 2SJ554-E | 45 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ554-E | 45 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ554 | 45 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ551-L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box |
| 2SJ551L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box Tray |
| 2SJ551S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ551STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ552 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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