參數(shù)資料
型號: 2SJ553STL-E
元件分類: JFETs
英文描述: 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SC-83, LDPAK-3
文件頁數(shù): 9/11頁
文件大?。?/td> 109K
代理商: 2SJ553STL-E
2SJ553(L), 2SJ553(S)
Rev.4.00 Sep 07, 2005 page 5 of 8
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
100
25
50
75
100
125
150
0
20
40
60
80
Channel Temperature Tch (°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
IAP = –30 A
VDD = –25 V
duty < 0.1 %
Rg
≥ 50
–50
0
–10
–20
–30
–40
0
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–5 V
VGS = 0
–10 V
Avalanche Test Circuit
Avalanche Waveform
0
ID
VDS
IAP
V(BR)DSS
VDD
EAR =
L IAP
2
2
1
VDSS
VDSS – VDD
D.U.T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
–15 V
L
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γs
(t)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pul
se
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) θch – c
θch – c = 1.67°C/W, Tc = 25°C
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