參數(shù)資料
型號: 2SJ619
廠商: Toshiba Corporation
英文描述: ZD-3.6V- 1 W
中文描述: 東芝場效應(yīng)晶體管硅P通道馬鞍山類型(L2MOSV)
文件頁數(shù): 3/6頁
文件大?。?/td> 220K
代理商: 2SJ619
2SJ619
2002-08-09
3
F
f
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Gate-source voltage V
GS
(V)
I
D
– V
GS
D
D
Gate-source voltage V
GS
(V)
V
DS
– V
GS
Drain current I
D
(A)
Y
fs
I
D
Drain current I
D
(A)
R
DS (ON)
I
D
D
R
D
0
5
1
3
2
4
Common source
Tc 25°C
pulse test
VGS 2 V
3
10
8
2.5
6
4
0
0.4
0.8
1.2
1.6
2.0
0
20
4
12
8
16
VGS 2 V
Common source
Tc 25°C
pulse test
0
2
4
6
8
10
8
3
10
2.5
6
3.5
4
0
0.8
2.4
1.6
3.2
0
8
12
16
20
4
Common source
Tc 25°C
pulse test
ID 8 A
2
4
0.1
1
0.3
3
10
0.1
1.0
0.5
3.0
0.03
VGS 4 V
0.3
Common source
Tc 25°C
Pulse test
20
0.05
1
0.3
30
30
10
3
5
3
10
1
50
Tc 55°C
25
100
Common source
VDS 10 V
Pulse test
10
0
2
3
4
5
6
1
0
10
2
6
4
8
Common source
VDS 10 V
pulse test
Tc 55°C
25
100
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