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參數(shù)資料
| 型號(hào)： | 2SJ661 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 60 V, 0.056 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SMP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ661 |
2SJ661
No.8586-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--38
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--152
A
Allowable Power Dissipation
PD
1.65
W
Tc=25
°C65
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
250
mJ
Avalanche Current *2
IAV
--38
A
Note : *1 VDD=30V, L=200H, IAV=--38A
*2 L
≤200H, Single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--19A
18
31
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--19A, VGS=--10V
29.5
39
m
RDS(on)2
ID=--19A, VGS=--4V
40
56
m
Marking : J661
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8586
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N1805QA MS IM TB-00001078
2SJ661
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ661_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SJ661-1E | 功能描述:MOSFET P-CH 60V 38A 制造商:on semiconductor 系列:- 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:邏輯電平柵極，4V 驅(qū)動(dòng) 漏源極電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:38A（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:39 毫歐 @ 19A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:- 不同 Vgs 時(shí)的柵極電荷（Qg）:80nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:4360pF @ 20V 功率 - 最大值:1.65W 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-262-3，長(zhǎng)引線，I2Pak，TO-262AA 供應(yīng)商器件封裝:TO-262-3 標(biāo)準(zhǔn)包裝:50 |
| 2SJ661-DL-1E | 制造商:ON Semiconductor 功能描述:PCH 4V DRIVE SERIES - Tape and Reel |
| 2SJ661-DL-E | 功能描述:MOSFET P-CH 4V DRIVE SMP-FD RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SJ662 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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