參數(shù)資料
型號: 2SK1017
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: 20 A, 450 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-65, TO-3P, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 238K
代理商: 2SK1017
1
Item
Symbol
Rating
Unit
Drain-source voltage
VDS
450
Continuous drain current
ID
20
Pulsed drain current
ID(puls]
55
Continuous reverse drain current
IDR
20
Gate-source peak voltage
VGS
±30
Max. power dissipation
PD
150
Operating and storage
Tch
+150
temperature range
Tstg
2SK1017
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
V
A
V
W
°C
-55 to +150
Outline Drawings
F- II SERIES
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGSS=±30V Guarantee
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
JEDEC
EIAJ
SC-65
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
Min.
Typ.
Max.
Units
V
A
mA
nA
S
pF
ns
V
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-a)
channel to ambient
Rth(ch-c)
channel to case
35.0
0.833
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Diode forward on-voltage
Reverse recovery time
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=450V VGS=0V
Tch=25°C
Tch=125°C
VGS=±30V VDS=0V
ID=10A VGS=10V
ID=10A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V RG=25
ID=20A
VGS=10V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR di/dt=100A/
s Tch=25°C
450
2.5
3.5
5.0
10
500
0.2
1.0
10
100
0.26
0.35
7.0
14.0
2200
3300
320
480
140
210
50
75
200
300
450
190
290
1.25
1.88
500
TO-3P
3. Source
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