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參數(shù)資料
| 型號(hào)： | 2SK1161 |
| 元件分類： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SK1161 |
2SK1161, 2SK1162
4
120
80
40
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
100
0.1
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
30
3
1.0
1
3
30
300
Ta = 25°C
10
s
100
s
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(T
C =
25°C)
Operation
in
this
Area
is
Limited
by
R
DS
(on)
2SK1161
2SK1162
0.3
10
3
Pulse Width PW (s)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1.0
0.1
0.3
D = 1
10
0.03
0.01
100
10 m
100 m
1
10
1 m
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pulse
T
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 1.25°C/W, T
C = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1168-E | 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1167-E | 15 A, 450 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK118-O | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK118-Y | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK118-R | N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1161(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1161-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1162 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 500V 10A 3PIN TO-3P - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1162-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-3P |
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