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參數(shù)資料
| 型號(hào)： | 2SK1163 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1163 |
2SK1167, 2SK1168
5
10
8
4
2
0
4
8
12
16
20
6
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
10 A
ID = 5 A
20 A
5
2
1.0
0.5
0.05
1
2
5
20
50
100
Drain Current ID (A)
0.1
0.2
Pulse Test
10
VGS = 10 V
15 V
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
10 A
ID = 20 A
5 A
Forward Transfer Admittance vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
Drain Current ID (A)
1.0
2
75°C
–25°C
Forward
Transfer
Admittance
yfs
(S)
TC = 25°C
VDS = 20 V
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1164 | |
| 2SK1165 | |
| 2SK1166 | |
| 2SK1880(S) | |
| 2SC2396 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1164 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1165 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1165(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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