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參數(shù)資料
| 型號： | 2SK1202 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 900V五（巴西）直| 5A條（?。﹟對247VAR |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 56K |
| 代理商： | 2SK1202 |
2SK1254(L), 2SK1254(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
120
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
A
V
DS = 100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
—
0.30
0.40
I
D = 2 A, VGS = 10 V *
1
—
0.35
0.55
I
D = 2 A, VGS = 4 V *
1
Forward transfer admittance
|yfs|
2.4
4.0
—
S
I
D = 2 A, VDS = 10 V *
1
Input capacitance
Ciss
—
420
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
190
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
25
—
pF
Turn-on delay time
t
d(on)
—5
—ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
—
20
—
ns
R
L = 15
Turn-off delay time
t
d(off)
—
150
—
ns
Fall time
t
f
—45
—
ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
160
—
ns
I
F = 3 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1203 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON N-CHANNEL MOS FET |
| 2SK1204 | 制造商:Hitachi 功能描述:MOSFET Transistor, N-Channel, TO-247VAR |
| 2SK1205 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-247VAR |
| 2SK1206 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK121 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:Silicon N-Channel Junction FET |
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