參數(shù)資料
型號(hào): 2SK1205
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管| MOSFET的| N溝道| 1KV交五(巴西)直| 5A條(?。﹟對(duì)247VAR
文件頁(yè)數(shù): 7/11頁(yè)
文件大?。?/td> 56K
代理商: 2SK1205
2SK1254(L), 2SK1254(S)
5
2.0
1.6
1.2
0.8
0.4
0
24
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
3 A
2 A
ID = 1 A
PulseTest
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
5
2
1.0
0.5
0.05
0.5
1.0
2.0
5.0
20
Drain Current ID (A)
0.2
Static Drain to Source on State
Resistance vs. Drain Current
10
0.2
0.1
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
10 V
VGS = 4 V
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
1, 2 A
ID = 3 A
3 A
1, 2 A
VGS = 4 V
VGS = 10 V
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Forward Transfer Admittance
vs. Drain Current
10
5
2
1.0
0.1
0.2
5
0.2
0.5
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
1.0
2
0.05
0.1
–25°C
TC = 25°C
75°C
VDS = 10 V
Pulse Test
相關(guān)PDF資料
PDF描述
2SK1206
2SK1212-01 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1214 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 20A I(D) | SOT-186
2SK1215D Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1215E TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-323
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1206 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SK121 制造商:SONY 制造商全稱:Sony Corporation 功能描述:Silicon N-Channel Junction FET
2SK1211 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.5A I(D) | TO-247
2SK1211-01 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.5A I(D) | TO-247
2SK1212-01 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | SOT-199VAR