參數(shù)資料
型號: 2SK1260
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | SOT-186
中文描述: 晶體管| MOSFET的| N溝道| 100V的五(巴西)直| 5A條(丁)|的SOT - 186
文件頁數(shù): 8/11頁
文件大?。?/td> 56K
代理商: 2SK1260
2SK1254(L), 2SK1254(S)
6
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
500
200
50
20
10
5
100
0.1
0.2
0.5
1.0
2
5
10
di/dt = 50 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Typical Capacitance
vs. Drain to Source Voltage
1,000
100
10
1
0
1020
30
4050
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
VGS = 0
f = 1 MHz
Coss
Ciss
Crss
Dynamic Input Characteristics
100
80
60
40
20
0
816
24
32
40
Gate Charge Qg (nc)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
50 V
VDD = 25 V
VDS
ID = 3 A
VGS
VDD = 80 V
50 V
Drain
to
Source
Voltage
V
DS
(V)
80 V
25 V
Switching Characteristics
500
100
50
20
10
5
200
Switching
Time
t
(ns)
1.0
0.2
0.5
1.0
2
10
Drain Current ID (A)
5
tr
tf
td (off)
td (on)
<
VGS = 10 V VDD = 30 V
PW = 2
s, duty
1 %
相關PDF資料
PDF描述
2SK1261 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
2SK1262 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | SOT-186
2SK1263 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
2SK1264 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | SOT-186
2SK1265 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
相關代理商/技術參數(shù)
參數(shù)描述
2SK1261 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | SOT-186
2SK1262 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | SOT-186
2SK1263 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-247VAR
2SK1264 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | SOT-186
2SK1265 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186