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參數(shù)資料
| 型號： | 2SK1268 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 450V五（巴西）直| 15A條（?。﹟對247VAR |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SK1268 |
2SK1254(L), 2SK1254(S)
6
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
500
200
50
20
10
5
100
0.1
0.2
0.5
1.0
2
5
10
di/dt = 50 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Typical Capacitance
vs. Drain to Source Voltage
1,000
100
10
1
0
1020
30
4050
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
VGS = 0
f = 1 MHz
Coss
Ciss
Crss
Dynamic Input Characteristics
100
80
60
40
20
0
816
24
32
40
Gate Charge Qg (nc)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
50 V
VDD = 25 V
VDS
ID = 3 A
VGS
VDD = 80 V
50 V
Drain
to
Source
Voltage
V
DS
(V)
80 V
25 V
Switching Characteristics
500
100
50
20
10
5
200
Switching
Time
t
(ns)
1.0
0.2
0.5
1.0
2
10
Drain Current ID (A)
5
tr
tf
td (off)
td (on)
<
VGS = 10 V VDD = 30 V
PW = 2
s, duty
1 %
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1269 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-247VAR |
| 2SK1275 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1282 | |
| 2SK1282-Z | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1287 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1269 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-247VAR |
| 2SK1270 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1271 | 制造商:NEC 制造商全稱:NEC 功能描述:N CHANNEL MOS FIELD EFFECT POWER TRANSISTOR |
| 2SK1271-A | 制造商:Renesas Electronics 功能描述:Nch 1400V 5A 4000m@10V TO3P Bulk |
| 2SK1272 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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