參數(shù)資料
型號: 2SK1293
英文描述: 2SK1293 Data Sheet | Data Sheet[07/1993]
中文描述: 2SK1293數(shù)據(jù)表|數(shù)據(jù)表[07/1993]
文件頁數(shù): 5/11頁
文件大?。?/td> 56K
代理商: 2SK1293
2SK1254(L), 2SK1254(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
120
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
100
A
V
DS = 100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
0.30
0.40
I
D = 2 A, VGS = 10 V *
1
0.35
0.55
I
D = 2 A, VGS = 4 V *
1
Forward transfer admittance
|yfs|
2.4
4.0
S
I
D = 2 A, VDS = 10 V *
1
Input capacitance
Ciss
420
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
190
pF
f = 1 MHz
Reverse transfer capacitance
Crss
25
pF
Turn-on delay time
t
d(on)
—5
—ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
20
ns
R
L = 15
Turn-off delay time
t
d(off)
150
ns
Fall time
t
f
—45
ns
Body to drain diode forward
voltage
V
DF
0.95
V
I
F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
160
ns
I
F = 3 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
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