參數(shù)資料
型號： 2SK1297
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-247VAR
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 40A條（?。﹟對247VAR
文件頁數(shù)： 6/11頁
文件大?。?/td> 56K
代理商： 2SK1297
2SK1254(L), 2SK1254(S)
4
Power vs. Temperature Derating
30
20
10
0
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
1
10
1,000
Drain to Source Voltage VDS (V)
0.5
0.05
100
50
2
Drain
Current
I
D
(A)
1 ms
100
s
10
s
300
30
3
0.1
0.2
1.0
5
10
20
PW
=
10
ms
(1
Shot)
Operation in this
area is limited
by RDS (on)
DC
Operation
(T
C =
25°C)
Ta = 25°C
Typical Output Characteristics
5
4
3
2
0
4
8
12
16
20
1
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Pulse Test
VGS = 2 V
4 V
3 V
2.5 V
10 V
Typical Transfer Characteristics
4
3
2
1
0
12
3
4
5
Gate to Source Voltage VGS (V)
5
75°C
Drain
Current
I
D
(A)
VDS = 10 V
Pulse Test
–25°C
TC = 25°C
相關PDF資料
PDF描述
2SK1308 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-221VAR
2SK1308A Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1311 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SOT-89
2SK1313(L) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1314(L) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
相關代理商/技術參數(shù)
參數(shù)描述
2SK1298 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 40A 3-Pin(3+Tab) TO-3PFM Bulk
2SK1298-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1299 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK12996 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
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