參數(shù)資料
型號: 2SK1300
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 6/9頁
文件大?。?/td> 48K
代理商: 2SK1300
2SK1300
6
500
200
100
50
20
10
5
0.1
0.2
Reverse Drain Current I
DR
(A)
1
10
2
0.5
5
Body to Drain Diode Reverse
Recovery Time
R
di/dt = 50 A/
μ
s
V
= 0, Ta = 25°C
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10,000
1,000
100
10
C
0
10
20
50
Drain to Source Voltage V
DS
(V)
30
40
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
200
160
120
80
40
0
8
24
32
Gate Charge Qg (nc)
16
20
16
12
8
4
Dynamic Input Characteristics
D
D
G
G
40
0
V
DS
V
GS
V
DD
= 25 V
50 V
80 V
I
D
= 10 A
V
= 80 V
50 V
25 V
Switching Characteristics
500
200
100
50
10
5
0.2
0.5
2
20
Drain Current I
D
(A)
5
1
10
S
20
t
d
(off)
t
d (on)
t
f
t
r
V
= 10 V, PW = 2
μ
s
duty < 1 % V
DD
=
30 V
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參數(shù)描述
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