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參數(shù)資料
| 型號： | 2SK1302 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 48K |
| 代理商： | 2SK1302 |
2SK1302
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V *
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
250
V
GS(off)
R
DS(on)
1.0
—
2.0
V
Static drain to source on state
resistance
—
0.065
0.085
—
0.085
0.12
I
D
= 10 A, V
GS
= 4 V *
1
I
D
= 10 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Forward transfer admittance
|yfs|
10
16
—
S
Input capacitance
Ciss
—
1300
—
pF
Output capacitance
Coss
—
540
—
pF
Reverse transfer capacitance
Crss
—
160
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
12
—
ns
I
D
= 10 A, V
GS
= 10 V,
R
L
= 3
Rise time
—
100
—
ns
Turn-off delay time
—
300
—
ns
Fall time
—
150
—
ns
Body to drain diode forward
voltage
—
1.3
—
V
I
F
= 20 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
300
—
ns
I
F
= 20 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1302-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1303 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1303(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1303-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1304 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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