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參數(shù)資料
| 型號： | 2SK1306 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SK1306 |
2SK1306
3
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
r
20
—
—
V
I
G
=
r
100
P
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
r
10
P
A
V
GS
=
r
16 V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
250
P
A
V
GS(off)
R
DS(on)
1.0
—
2.0
V
Static drain to source on state
resistance
—
0.10
0.13
:
1
—
0.13
0.18
:
I
D
= 8 A, V
GS
= 4 V *
I
D
= 8 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
|yfs|
7
11
—
S
1
Input capacitance
Ciss
—
860
—
pF
Output capacitance
Coss
—
340
—
pF
Reverse transfer capacitance
Crss
—
100
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
:
Rise time
—
70
—
ns
Turn-off delay time
—
180
—
ns
Fall time
—
100
—
ns
Body to drain diode forward
voltage
—
1.3
—
V
I
F
= 15 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
250
—
ns
I
F
= 15 A, V
GS
= 0,
di
F
/dt = 50 A/
P
s
See characteristic curves of 2SK1301.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1306-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220FM Box Bulk |
| 2SK1307 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1307-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1308 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK1308A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-221VAR |
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