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參數(shù)資料
| 型號： | 2SK1310A |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 2-22C2A, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 112K |
| 代理商： | 2SK1310A |
2SK1310A
2001-01-31 2/4
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Output Power
Po
190
220
—
W
Drain Efficiency
ηD
VDD = 50 V, Iidle = 0.2 A × 2
Pi = 10 W, f = 230 MHz *
—
65
—
%
Drain-Source Breakdown Voltage
V (BR) DSS
ID = 10 mA, VGS = 0
100
—
V
Drain Cut-off Current
IDSS
VDS = 80 V, VGS = 0
—
1.0
mA
Gate Threshold Voltage
Vth
ID = 1 mA, VDS = 10 V
0.5
—
3.0
V
Drain-Source ON Resistance
RDS (on)
ID = 4 A, VGS = 10 V **
—
0.9
1.5
Drain-Source ON Voltage
VDS (on)
ID = 4 A, VGS = 10 V **
—
3.6
6.0
V
Forward Transfer Admittance
|Yfs|
ID = 3 A, VDS = 20 V **
0.9
1.3
—
S
Input Capacitance
Ciss
VDS = 50 V, VGS = 0, f = 1 MHz
—
100
—
pF
Output Capacitance
Coss
VDS = 50 V, VGS = 0, f = 1 MHz
—
40
—
pF
Reverse Transfer Capacitance
Crss
VDS = 50 V, VGS = 0, f = 1 MHz
—
1
—
pF
*:
PushPull Operation
**:
Pulse Test
This transistor is the electrostatic sensitive device. Please handle with caution.
相關PDF資料 |
PDF描述 |
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| 2SK1314L | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1313S | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1314S | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1313L | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1313S-E | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1310A_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER |
| 2SK1311 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SOT-89 |
| 2SK1313 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1313(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-251VAR |
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