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參數(shù)資料
| 型號： | 2SK1313(L) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 450V五（巴西）直| 5A條（?。﹟對251VAR |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK1313(L) |
2SK1313(L)(S), 2SK1314(L)(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1313
V
DSS
450
V
2SK1314
500
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
5A
Drain peak current
I
D(pulse)*
1
20
A
Body to drain diode reverse drain current
I
DR
5A
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at T
C =
25°C
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK1314(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1315(L) | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-251VAR |
| 2SK1316(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1327L | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-251VAR |
| 2SK1327S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1313L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1313S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1313STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1314 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1314(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-251VAR |
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