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參數(shù)資料
| 型號(hào)： | 2SK1382 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 60 A, 100 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 390K |
| 代理商： | 2SK1382 |
2SK1382
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSIII)
2SK1382
Relay Drive, Motor Drive and DCDC Converter
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 15 m (typ.)
High forward transfer admittance
: |Yfs| = 47 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
60
Drain current
Pulse (Note 1)
IDP
240
A
Drain power dissipation (Tc = 25°C)
PD
200
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.625
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
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| 2SK1402 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1382(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba 功能描述:Nch 100V 60A 0.02@10V TO3P(L) 制造商:Toshiba 功能描述:Nch 100V 60A 0.02@10V TO3P(L) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 60A TO-3PL 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-3PL |
| 2SK1382_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS) |
| 2SK1382_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Relay Drive, Motor Drive and DC−DC Converter Applications |
| 2SK1382Q | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-3PL |
| 2SK1384 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL ENHANCEMENT TYPE MOS-FET |
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