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參數(shù)資料
| 型號： | 2SK1399 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-59, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 240K |
| 代理商： | 2SK1399 |
Data Sheet D14770EJ3V0DS
3
2SK1399
TYPICAL CHARACTERISTICS (TA = 25°C)
TA - Ambient Temperature - C
P
T
-
Total
Power
Dissipation
-
mW
0
120
30
60
90
150
210
180
240
50
100
150
200
250
300
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
mA
0.5
2
1
1.5
20
60
40
0
80
100
2.5 V
VGS = 4.5 V
4.0 V
Pulse measurement
TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
mA
78
56
34
01
2
100
10
1
0.1
0.01
VDS = 3.0 V
Pulse measurement
TA = 150C
75C
25C
–25C
150
2.0
1.5
1.0
0.5
50
100
0
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS = 3.0 V
ID = 1
A
GATE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
20
50 100 200
500 1000
ID - Drain Current - mA
|y
fs
|
-
Forward
Transfer
Admittance
-
mS
100
200
500
1000
10
20
50
15
VDS = 5.0 V
Pulse measurement
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
30
VGS - Gate to Source Voltage - V
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
10
0
510
0
1
234
6
789
ID = 100 mA
10 mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1399-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1399-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R Tape & Reel |
| 2SK1400 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 300V 7A 3PIN TO-220AB - Rail/Tube |
| 2SK1400A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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