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參數(shù)資料
| 型號： | 2SK1401 |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 300 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SK1401 |
2SK1401, 2SK1401A
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
K1401
V
(BR)DSS
300
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
K1401A
350
—
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage
K1401
I
DSS
—
250
A
V
DS = 240 V, VGS = 0
drain current
K1401A
V
DS = 280 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source K1401
R
DS(on)
—
0.25
0.35
I
D = 8 A, VGS = 10 V *
1
on state resistance
K1401A
—
0.30
0.40
Forward transfer admittance
|yfs|
6
9.5
—
S
I
D = 8 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1250
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
420
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
70
—
pF
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 8 A, VGS = 10 V,
Rise time
t
r
—
80
—
ns
R
L = 3.75
Turn-off delay time
t
d(off)
—
100
—
ns
Fall time
t
f
—55
—
ns
Body to drain diode forward
voltage
V
DF
—
1.05
—
V
I
F = 15 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
370
—
ns
I
F = 15 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
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PDF描述 |
|---|---|
| 2SK1402A | 4 A, 650 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 2.4 ohm, POWER, FET, TO-220AB |
| 2SK1405-E | 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1401A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1401A(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1402 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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