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參數(shù)資料
| 型號(hào)： | 2SK1485 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | 2SK1485 |
1991, 2001
MOS FIELD EFFECT TRANSISTOR
2SK1485
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
Document No.
D15680EJ3V0DS00 (3rd edition)
(Previous No. TC-2349)
Date Published
July 2001 NS CP(K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
1.5 ± 0.1
0.41
+0.03
–0.05
0.8
MIN. 0.42
±0.06
1.5
3.0
0.47
±0.06
0.42
±0.06
2.5
±
0.1
4.0
±
0.25
4.5 ± 0.1
1.6 ± 0.2
1
2
3
1.Source
2.Drain
3.Gate
MARK : NC
DESCRIPTION
The 2SK1485, N-channel vertical type MOS FET is a switching device
which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FET has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors, relays,
and solenoids.
FEATURES
Directly driven by ICs having a 5 V power source.
Low on-state resistance
RDS(on)1 = 1.2
MAX. (VGS = 4.0 V, ID = 0.5 A)
RDS(on)2 = 0.8
MAX. (VGS = 10 V, ID = 0.5 A)
Complementary to 2SJ199.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±1.0
A
Drain Current (pulse)
Note1
ID(pulse)
±2.0
A
Total Power Dissipation (TA = 25°C)
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic board of 16 cm2
× 0.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
5
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1491-A | 25 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1515 | 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1516 | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1515 | 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1516-E | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1485-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1485-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SC-62 T/R |
| 2SK1486 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 300V 32A 3PIN TO-3P(L) - Bulk |
| 2SK1486(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 300V 32A 3-Pin TO-3PL |
| 2SK1486_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
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