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參數(shù)資料
| 型號(hào)： | 2SK1505MR |
| 英文描述： | MOSFET |
| 中文描述： | MOSFET的 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1505MR |
2SK1515, 2SK1516
6
5,000
0.5
10
Reverse Drain Current IDR (A)
2,000
100
15
0.2
500
1,000
50
2
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
200
20
1,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
100
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
5,000
5
10
500
16
40
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
824
32
200
300
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
0
VGS
VDS
VDD = 400 V
250 V
100 V
ID = 7 A
Gate Charge Qg (nc)
250 V
400 V
VDD = 100 V
500
Drain Current ID (A)
Switching
Time
t
(ns)
200
5
50
100
10
Switching Characteristics
td (off)
0.5
0.2
1
tf
tr
td (on)
20
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
210
520
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1507-01M | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1511 | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-247 |
| 2SK1512 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1514 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-247VAR |
| 2SK1523 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1505-MR | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOSFET |
| 2SK1506 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:MOSFETs |
| 2SK1507 | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-Channel Silicon Power Mos-fet(F-II Series) |
| 2SK1507-01 | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-Channel Silicon Power Mos-fet(F-II Series) |
| 2SK1507-01M | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-220AB |
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