參數(shù)資料
型號(hào): 2SK1507-01M
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管| MOSFET的| N溝道| 600V的五(巴西)直| 9A條(?。﹟ TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 47K
代理商: 2SK1507-01M
2SK1515, 2SK1516
6
5,000
0.5
10
Reverse Drain Current IDR (A)
2,000
100
15
0.2
500
1,000
50
2
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
200
20
1,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
100
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
5,000
5
10
500
16
40
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
824
32
200
300
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
0
VGS
VDS
VDD = 400 V
250 V
100 V
ID = 7 A
Gate Charge Qg (nc)
250 V
400 V
VDD = 100 V
500
Drain Current ID (A)
Switching
Time
t
(ns)
200
5
50
100
10
Switching Characteristics
td (off)
0.5
0.2
1
tf
tr
td (on)
20
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
210
520
相關(guān)PDF資料
PDF描述
2SK1511 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-247
2SK1512 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
2SK1514 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-247VAR
2SK1523 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
2SK1524 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-220VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1507-01MR 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-Channel Silicon Power Mos-fet(F-II Series)
2SK1508 制造商:FUJITSU 功能描述:35 A, 60 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2SK1509 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET
2SK1510 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3.5A I(D) | SIP
2SK1510-01 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3.5A I(D) | SIP