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參數(shù)資料
| 型號： | 2SK1512 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 900V五（巴西）直| 10A條（?。﹟至247 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1512 |
2SK1515, 2SK1516
4
120
80
40
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
50
10
2
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
20
5
0.5
1
0.2
3
10
30
100
300
1,000
0.05
0.1
1
Ta = 25°C
100
s
1 ms
PW
=
10
ms
(1
shot
pulse)
DC
Operation
(T
C =
25°C)
Operation
in
this
area
is
limited
by
R
DS
(on)
10
s
2SK1515
2SK1516
20
50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
16
4
10
30
40
0
8
12
Drain
Current
I
D
(A)
VGS = 4 V
Pulse Test
7 V
10 V
6 V
5 V
20
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
16
4
26
8
0
8
12
VDS = 20 V
Pulse Test
–25°C
75°C
Ta = 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1514 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-247VAR |
| 2SK1523 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1524 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-220VAR |
| 2SK1525 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1529O | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1514 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-247VAR |
| 2SK1515 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1515-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1516 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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