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參數(shù)資料
| 型號： | 2SK1530Y |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 12A條（丁）|對247VAR |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1530Y |
2SK1515, 2SK1516
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1515 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1516
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1515 I
DSS
—
250
A
V
DS = 360 V, VGS = 0
drain current
2SK1516
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1515 R
DS(on)
—
0.6
0.8
I
D = 5 A, VGS = 10 V *
1
on state resistance
2SK1516
—
0.7
0.9
Forward transfer admittance
|yfs|
4.0
7.0
—
S
I
D = 5 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1100
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
310
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
50
—
pF
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 5 A, VGS = 10 V,
Rise time
t
r
—
65
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—95
—
ns
Fall time
t
f
—55
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
120
—
ns
I
F = 10 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1530-Y | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
| 2SK1530-Y(F) | 功能描述:MOSFET MOSFET N-CH 200V 12A TO-3PL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK1530-YF | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
| 2SK1531 | 制造商:Toshiba 功能描述:Cut Tape 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1532 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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