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參數(shù)資料
| 型號： | 2SK1573-E |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SK1573-E |
2SK1573
Rev.2.00 Sep 07, 2005 page 4 of 6
2.0
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
1.6
0.4
0
80
120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
–40
Pulse Test
VGS = 10 V
ID = 20 A
10 A
5 A
50
20
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
0.2
20
10
5
2
1
0.5
Drain Current ID (A)
0.5
1
2
5
10
VDS = 10 V
Pulse Test
TC = –25°C
25
°C
75
°C
5,000
50
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
0.5
2,000
1,000
500
200
100
50
12
5
10
20
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
10,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
1,000
100
10
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
1,000
80
200
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
800
200
40
120
160
0
400
600
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
VDD = 100 V
250 V
400 V
VDD = 400 V
250 V
100 V
ID = 15 A
VDS
VGS
500
50
Drain Current ID (A)
Switching
Time
t
(ns)
0.5
Switching Characteristics
200
100
50
20
10
5
15
10
220
VGS = 10 V, PW = 2 s
duty < 1% VDD = 30 V
td (off)
tf
td (on)
tr
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