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參數(shù)資料
| 型號： | 2SK1584 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2SK1584 |
1991,2001
MOS FIELD EFFECT TRANSISTOR
2SK1584
N-CHANNEL MOS FET
FOR SWITCHING
Document No. D15283EJ2V0DS00 (2nd edition)
Date Published February 2001 NS CP (K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
PACKAGE DRAWING (Unit : mm)
1
2
3
4.5±0.1
1.6±0.2
0.8MIN
.
2.5±0.1
4.0±0.25
0.42
±0.06
1.5
3.0
1.5±0.1
0.41
+0.03
-0.05
0.47
DESCRIPTION
The 2SK1584 is a switching device which can be driven directly
by a 5-V power source.
The 2SK1584 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
actuator driver.
FEATURES
Can be driven by a 5-V power source.
Low On-state resistance :
RDS(on)1 = 2.0
MAX. (VGS = 4 V, ID = 0.3 A)
RDS(on)2 = 1.5
MAX. (VGS = 10 V, ID = 0.3 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±500
mA
Drain Current (pulse)
Note1
ID(pulse)
±1.0
A
Total Power Dissipation (TA = 25°C)
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150 °C
Notes1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic board of 16 cm
2
× 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Gate
Drain
Electrode
Connection
1.Source
2.Drain
3.Gate
Marking : NH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1584-AZ | 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1584-T1 | 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1586-AZ | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1589-A | 100 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1589-A | 100 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1584-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1584-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1585 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK1585-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1586 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET FOR SWITCHING |
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