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參數(shù)資料
| 型號(hào)： | 2SK1591 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIMOLD, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 764K |
| 代理商： | 2SK1591 |
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MOS FIELD EFFECT TRANSISTOR
2SK1591
N-CHANNEL MOSFET
FOR SWITCHING
DATA SHEET
Document No. D17807EJ3V0DS00 (3rd edition)
(Previous No. TC-2300A)
Date Published November 2005 NS CP(K)
Printed in Japan
1990
DESCRIPTION
The 2SK1591, N-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
As the MOSFET has excellent switching characteristics and
high drain to source voltage, it is suitable for applications
requiring high voltage and high-speed.
FEATURES
Directly driven by ICs having a 5 V power source.
Not necessary to consider driving current because of its high
input impedance.
Has high voltage and high-speed switching characteristics.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1591
SC-59 (Mini Mold)
Marking: G18
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±200
mA
Drain Current (pulse)
Note
ID(pulse)
±400
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
2.9
±0.2
0.4
+0.1
–0.05
0.3
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1. Source
2. Gate
3. Drain
1
2
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1595 | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1596 | 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1602 | 2.8 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK160K6 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK1613 | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1591-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1591-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 0.2A 3-Pin SC-59 |
| 2SK1592 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK1592-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1592-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
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