參數(shù)資料
型號(hào): 2SK161-O
元件分類: 小信號(hào)晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封裝: 2-4E1D, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 209K
代理商: 2SK161-O
2SK161
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK161
FM Tuner Applications
VHF Band Amplifier Applications
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
High forward transfer admittance: |Yfs| = 9 mS (typ.)
Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDO
-18
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = -0.5 V, VDS = 0
-10
nA
Gate-drain breakdown voltage
V (BR) GDO
IG = -100 mA
-18
V
Drain current
IDSS
(Note)
VGS = 0, VDS = 10 V
1.0
10
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 1 mA
-0.4
-4.0
V
Forward transfer admittance
Yfs
VGS = 0, VDS = 10 V, f = 1 kHz
9
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
6.0
pF
Reverse transfer capacitance
Crss
VGD = -10 V, f = 1 MHz
0.10
0.15
pF
Power gain
GPS
VDD = 10 V, f = 100 MHz (Figure 1)
18
dB
Noise figure
NF
VDD = 10 V, f = 100 MHz (Figure 1)
2.5
3.5
dB
Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR: 5.0~10.0 mA
Unit: mm
JEDEC
JEITA
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
相關(guān)PDF資料
PDF描述
2SK161 VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
2SK161-O VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
2SK161-Y VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
2SK161-GR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
2SK1620S 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
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