參數(shù)資料
型號(hào): 2SK1620S
元件分類: JFETs
英文描述: 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LDPAK-3
文件頁(yè)數(shù): 9/10頁(yè)
文件大小: 54K
代理商: 2SK1620S
Data Sheet D12355EJ3V0DS
6
2SK2981
PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
2)TO-252 (MP-3Z)
EQUIVALENT CIRCUIT
Drain
Source
Gate
Gate Protection
Diode
Body
Diode
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
13
6.5±0.2
5.0±0.2
4
1.5-
0.1
+0.2
5.5±0.2
7.0
MAX.
13.7
MIN.
2.3
0.75
0.5±0.1
2.3±0.2
1.6±0.2
1.1±0.2
0.5-0.1
+0.2
0.5-0.1
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
12
3
4
6.5±0.2
5.0±0.2
4.3
MAX.
0.8
2.3 2.3
0.9
MAX.
5.5±0.2
10.0
MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.3±0.2
0.5±0.1
0.8
MAX.
0.8
1.0
MIN.
1.8TYP.
0.7
1.1±0.2
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