參數(shù)資料
型號: 2SK1620S
元件分類: JFETs
英文描述: 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LDPAK-3
文件頁數(shù): 8/10頁
文件大?。?/td> 54K
代理商: 2SK1620S
Data Sheet D12355EJ3V0DS
5
2SK2981
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
50
20
0
50
100
150
ID = 10 A
40
80
60
10 V
4.5 V
VGS = 4 V
1.0
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
VGS = 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
1
10
100
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
0.1
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
0.1
10
100
1000
1
10
100
VDD = 15 V
VGS = 10 V
RG = 10
tf
tr
td(on)
td(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/
s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
912
24
3
10
20
30
40
2
4
6
8
0
VDD = 24 V
15 V
6 V
VDS
12
14
10
ID = 20 A
VGS = 10 V
VGS
6
15
18
21
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