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參數(shù)資料
| 型號(hào)： | 2SK1620STL-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | 2SK1620STL-E |
2SK1620(L), 2SK1620(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Maximum Safe Operation Area
1
10
1,000
Drain to Source Voltage VDS (V)
1.0
0.1
100
Operation in this area is
limited by RDS (on)
DC
Operation
(T
C =
25
°C)
PW
=
10
ms
(1
Shot)
Ta = 25
°C
1 ms
100
s
10
s
10
Drain
Current
I
D
(A)
Typical Output Characteristics
20
16
12
8
0
4
8
12
16
20
4
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
15 V
6 V
10 V
Pulse Test
5.5 V
5 V
VGS = 4.5 V
8 V
Typical Transfer Characteristics
16
12
8
4
0
24
6
8
10
Gate to Source Voltage VGS (V)
20
75
°C
Drain
Current
I
D
(A)
VDS = 10 V
Pulse Test
–25
°C
TC = 25°C
5
4
3
2
1
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
2 A
ID = 10 A
Pulse Test
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
0.5
0.2
0.1
0.05
0.005
1.0
2
5
10
50
Drain Current ID (A)
0.5
Static Drain to Source on State
Resistance vs. Drain Current
20
0.02
0.01
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
15 V
VGS = 10 V
Pulse Test
Power vs. Temperature Derating
60
40
20
0
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature TC (°C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1620L-E | 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1624(L) | 2.4 ohm, POWER, FET |
| 2SK1624(L) | 2.4 ohm, POWER, FET |
| 2SK1624(S) | 2.4 ohm, POWER, FET |
| 2SK1625(S) | 1.3 ohm, POWER, FET |
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