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參數(shù)資料
| 型號： | 2SK1623(S) |
| 元件分類： | JFETs |
| 英文描述： | 0.12 ohm, POWER, FET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 39K |
| 代理商： | 2SK1623(S) |
2SK1623(L), 2SK1623(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
R
DS(on)
—
0.065
0.085
I
D = 10 A, VGS = 10 V *
1
resistance
—
0.085
0.12
I
D = 10 A, VGS = 4 V *
1
Forward transfer admittance
|yfs|
10
16
—
S
I
D = 10 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1300
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
540
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
160
—
pF
Turn-on delay time
t
d(on)
—
12
—
ns
I
D = 10 A, VGS = 10 V,
Rise time
t
r
—
100
—
ns
R
L = 3
Turn-off delay time
t
d(off)
—
300
—
ns
Fall time
t
f
—
150
—
ns
Body to drain diode forward
voltage
V
DF
—
1.3
—
V
I
F = 20 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
300
—
ns
I
F = 20 A, VGS = 0,
di
F/dt = 50 A/s
Note
1. Pulse test
See characteristic curves of 2SK1302.
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